Luminescent Erbium-Doped Porous Silicon Bilayer Structures

Abstract

A novel method for preparing luminescent erbium-doped porous silicon(PSi) is presented. By anodic etching of an Er and O co-doped Si single crystalline film grown by molecular beam epitaxy, an Er-doped PSi/PSi bilayer structure is formed. The advantages of such a bilayer structure are efficient excitation of Er ions and suppression of energy back transfer for the de-excitation process. The Figure is an SEM image of a PSi:Er sample.