Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires

Abstract

We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insulating GaAs overlayer and connected as grown in a two-probe setup using the highly doped growth substrate and a top diffused contact. The measured conductance shows a non-Ohmic behavior with temperature and voltage-bias dependences following power laws, as expected for a quasi one- dimensional system.