Growth of GaAs nanostructures by area selective epitaxy by migration-enhanced epitaxy

Takeshi Toda; Tsuyoshi Hasegawa; Takayuki Iwai; Takahiro Uehara; Yoshiji Horíkoshi

doi:10.1016/j.physe.2004.03.013

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Growth of GaAs nanostructures by area selective epitaxy by migration-enhanced epitaxy

Takeshi Toda Tsuyoshi Hasegawa Takayuki Iwai Takahiro Uehara Yoshiji Horíkoshi

Year: 2004 Journal: Physica E Low-dimensional Systems and Nanostructures Vol: 23 (3-4)Pages: 315-319 Publisher: Elsevier BV

DOI: 10.1016/j.physe.2004.03.013

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Keywords:

Epitaxy Molecular beam epitaxy Materials science Nanostructure Optoelectronics Substrate (aquarium) Nanotechnology Lattice (music) Deposition (geology) Layer (electronics) Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Growth of GaAs nanostructures by area selective epitaxy by migration-enhanced epitaxy

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