JOURNAL ARTICLE
Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition
Year: 2007 Journal: Materials science forum Vol: 539-543 Pages: 1230-1235 Publisher: Trans Tech Publications
Abstract
We have synthesized the high-density Ga2O3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga2O3 nanowires were crystalline.
Keywords:
Nanowire Materials science Chemical vapor deposition Transmission electron microscopy Gallium Silicon Nanotechnology Chemical engineering Vapor–liquid–solid method Scanning electron microscope Impurity Oxide Metalorganic vapour phase epitaxy Spectroscopy Analytical Chemistry (journal) Optoelectronics Epitaxy Layer (electronics) Metallurgy Chemistry Composite material Organic chemistry
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3
Cited By
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FWCI (Field Weighted Citation Impact)
21
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0.10
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Citation History
Topics
Ga2O3 and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
ZnO doping and properties
Physical Sciences → Materials Science → Materials Chemistry
Gas Sensing Nanomaterials and Sensors
Physical Sciences → Engineering → Electrical and Electronic Engineering
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