Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires

Abstract

Crystal phase heterostructures, consisting of homogeneous composition zinc-blende inclusions in wurtzite InP and GaAs nanowires are investigated theoretically in the frame of the extended-basis tight-binding approach. Increased band gap for the wurtzite phase and staggered type II band alignment are predicted for both materials. Comparison of theoretical results with microphotoluminescence measurements on single InP nanowires yields fair semiquantitative agreement.