HREM of Defects in GaAs/Ga<sub>1-x</sub>In<sub>x</sub>As Strained Layer Superlatuices

Ö. Ünal; B. Laurich; T. E. Mitchell

doi:10.1557/proc-183-193

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HREM of Defects in GaAs/Ga_1-xIn_xAs Strained Layer Superlatuices

Ö. Ünal B. Laurich T. E. Mitchell

Year: 1990 Journal: MRS Proceedings Vol: 183 Publisher: Cambridge University Press

DOI: 10.1557/proc-183-193

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Keywords:

Materials science Superlattice Dislocation Layer (electronics) Strain (injury) Crystallography Substrate (aquarium) Condensed matter physics Optoelectronics Composite material Chemistry

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

HREM of Defects in GaAs/Ga_1-xIn_xAs Strained Layer Superlatuices

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