Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes

Ruiqian Guo; Jun Nishimura; Masato Matsumoto; M. Higashihata; Daisuke Nakamura; T. Okada

doi:10.1007/s00340-008-3257-2

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Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes

Ruiqian Guo Jun Nishimura Masato Matsumoto M. Higashihata Daisuke Nakamura T. Okada

Year: 2008 Journal: Applied Physics B Vol: 94 (1)Pages: 33-38 Publisher: Springer Science+Business Media

DOI: 10.1007/s00340-008-3257-2

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Keywords:

Materials science Optoelectronics Electroluminescence Heterojunction Nanowire Light-emitting diode Diode Sapphire Laser Nanotechnology Optics Layer (electronics)

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Electroluminescence from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes

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