Photoinduced effect in Ga–Ge–S based thin films

Sandra Helena Messaddeq; Máximo Siu Li; Satoru Inoue; Sidney J. L. Ribeiro; Younès Messaddeq

doi:10.1016/j.apsusc.2005.12.074

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Photoinduced effect in Ga–Ge–S based thin films

Sandra Helena Messaddeq Máximo Siu Li Satoru Inoue Sidney J. L. Ribeiro Younès Messaddeq

Year: 2006 Journal: Applied Surface Science Vol: 252 (24)Pages: 8738-8744 Publisher: Elsevier BV

DOI: 10.1016/j.apsusc.2005.12.074

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Keywords:

Band gap Materials science Scanning electron microscope Photobleaching Optics Refractive index Thin film Analytical Chemistry (journal) Absorption edge Irradiation Optoelectronics Chemistry Fluorescence Nanotechnology

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Phase-change materials and chalcogenides

Physical Sciences → Materials Science → Materials Chemistry

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Liquid Crystal Research Advancements

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Photoinduced effect in Ga–Ge–S based thin films

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