Impact Ionization in Semiconducting Single Wall Carbon Nanotubes

Albert Liao; Eric Pop

doi:10.1109/drc.2008.4800716

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JOURNAL ARTICLE

Impact Ionization in Semiconducting Single Wall Carbon Nanotubes

Albert Liao Eric Pop

Year: 2008 Vol: 92 Pages: 17-18

DOI: 10.1109/drc.2008.4800716

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Abstract

We have experimentally observed and modeled a second-order transport mechanism near breakdown in large-diameter (small-gap) semiconducting SWNTs. We determine impact ionization to be the primary cause of the up-kick in current. Subsequent simulations taking impact ionization into account provide a theoretical match to our experimentally observed current tail.

Keywords:

Impact ionization Ionization Carbon nanotube Materials science Current (fluid) Carbon fibers Optoelectronics Atomic physics Nanotechnology Chemistry Composite material Physics Ion Thermodynamics

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Carbon Nanotubes in Composites

Physical Sciences → Materials Science → Materials Chemistry

Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Impact Ionization in Semiconducting Single Wall Carbon Nanotubes

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