Studies of Thermally-Carbonized Porous Silicon Surfaces

Abstract

Thermally-carbonized porous silicon films have been prepared by exploiting the dissociation of acetylene. Thermoanalytical methods have been used to study the oxidation behavior of these films in different oxidizing ambients. The results have been compared to other stabilization methods. Due to enhanced adsorption and only slightly reduced specific surface area, the carbonization of porous silicon was found to be an attractive treatment for sensing applications. The possible post-treatments are also discussed.