Investigation of short wavelength intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate

Abstract

InGaAs/AlAs quantum wells on GaAs substrates were studied for near-infrared intersubband transitions. The relationships between the properties of the intersubband absorption and the structural/growth conditions of the quantum wells were quantitatively investigated by using theoretical calculations based on a k-p perturbation method. The total intersubband absorption magnitude is shown to be closely related to the leakage of free carriers from the Γ minimum of the well to the X minimum of the barrier. This work provides important information for design of devices utilizing short wavelength intersubband transitions.