Epitaxial growth of TiO2 thin films by pulsed laser deposition on GaAs(100) substrates

Abstract

Rutile-phase TiO2 thin films have been epitaxially grown on GaAs(100) substrates at 700 °C under 5 Pa oxygen ambient pressure, and at room temperature (30 °C) and 5×10−4 Pa base vacuum by KrF pulsed excimer laser deposition. The [110]-oriented TiO2 films were composed of two types of domains perpendicular to each other in the plane. From atomic force microscopy analysis, the epitaxial films had a surface with roughness less than 7 nm in root-mean-square.