Intrinsic Josephson effect devices of TI-2212 thin films

Abstract

Intrinsic Josephson effect devices from Tl2Ba2CaCu2O8 (Tl-2212) thin films were investigated. The device was produced by epitaxially growing a Tl-2212 thin film on a LaAlO3 substrate with the surface cut at a small angle to the LaAlO3(001) plane, and by patterning a microbridge in the proper direction. The I–V characteristics of the microbridges exhibit large hysteresis at low temperatures, and the temperature dependence of the critical current Ic(T) is in good agreement with the theoretical Ambegaokar–Baratoff relation for superconductor–insulator–superconductor (SIS) junctions. The I–V curves also show multibranches for longer microbridges.