Passivity and electronic properties of the silicon/silicondioxide interface

H. Flietner

doi:10.4028/www.scientific.net/msf.185-188.73

ScienceGate Book Chapters

JOURNAL ARTICLE

Passivity and electronic properties of the silicon/silicondioxide interface

H. Flietner

Year: 1995 Journal: Materials science forum Vol: 185-188 Pages: 73-82 Publisher: Trans Tech Publications

DOI: 10.4028/www.scientific.net/msf.185-188.73

Get Full-Text PDF Get Analytical Report

Keywords:

Materials science Passivity Silicon Interface (matter) Engineering physics Metallurgy Condensed matter physics Optoelectronics Composite material Electrical engineering Engineering Wetting

Metrics

Cited By

0.44

FWCI (Field Weighted Citation Impact)

Refs

0.64

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Passivity and electronic properties of the silicon/silicondioxide interface

Metrics

Citation History

Topics

Related Documents

Optical Properties of Silica Spheres Deposited on Silicondioxide/Silicon Structures

Surface charging of silicondioxide/silicon structures

Passivity phenomena at the silicon/electrolyte interface

Electronic properties on silicon-transition metal interface compounds

Interface electronic properties of eterojunctions based on nanocrystalline silicon