Electron spin resonance in amorphous silicon doped with Gd

J. H. Castilho; G. E. Barberis; C. Rettori; F. C. Marques; I. Chambouleyron; F. Alvarez

doi:10.1103/physrevb.39.8398

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Electron spin resonance in amorphous silicon doped with Gd

J. H. Castilho G. E. Barberis C. Rettori F. C. Marques I. Chambouleyron F. Alvarez

Year: 1989 Journal: Physical review. B, Condensed matter Vol: 39 (12)Pages: 8398-8402 Publisher: American Physical Society

DOI: 10.1103/physrevb.39.8398

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Made available in DSpace on 2015-06-30T13:43:11Z (GMT). No. of bitstreams: 1\n2-s2.0-35949009167.pdf: 300381 bytes, checksum: 7abc012e30c05b3e14b6c82a1e5621be (MD5)\n Previous issue date: 1989

Keywords:

Electron paramagnetic resonance Paramagnetism Dangling bond Impurity Materials science Doping Acceptor Silicon Analytical Chemistry (journal) Valence (chemistry) Atomic physics Nuclear magnetic resonance Condensed matter physics Chemistry Physics

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Glass properties and applications

Physical Sciences → Materials Science → Ceramics and Composites

Luminescence Properties of Advanced Materials

Physical Sciences → Materials Science → Materials Chemistry

Metallic Glasses and Amorphous Alloys

Physical Sciences → Engineering → Mechanical Engineering

Electron spin resonance in amorphous silicon doped with Gd

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