Growth of InGaAs/GaAs strained quantum wells on GaAs(111)B substrates and continuous wave operation of (111)-oriented InGaAs strained quantum well lasers

Tetsuya Takeuchi; Koji Muraki; Y. Hanamaki; S. Fukatsu; N. Yamada; Naotaka Ogasawara; Nobuo Mikoshiba; Y. Shiraki

doi:10.1016/0022-0248(95)80156-7

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Growth of InGaAs/GaAs strained quantum wells on GaAs(111)B substrates and continuous wave operation of (111)-oriented InGaAs strained quantum well lasers

Tetsuya Takeuchi Koji Muraki Y. Hanamaki S. Fukatsu N. Yamada Naotaka Ogasawara Nobuo Mikoshiba Y. Shiraki

Year: 1995 Journal: Journal of Crystal Growth Vol: 150 Pages: 1338-1343 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(95)80156-7

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Keywords:

Misorientation Quantum well Molecular beam epitaxy Optoelectronics Substrate (aquarium) Materials science Gallium arsenide Laser Continuous wave Crystal (programming language) Epitaxy Crystal growth Condensed matter physics Optics Chemistry Nanotechnology Physics Crystallography Microstructure Composite material Layer (electronics)

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Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Growth of InGaAs/GaAs strained quantum wells on GaAs(111)B substrates and continuous wave operation of (111)-oriented InGaAs strained quantum well lasers

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