Nonvolatile resistive memory devices based on Ag

Abstract

Ag-based nonvolatile resistive memory devices are fabricated with the help of a simple soft-chemical process, which can transform Ag film into Ag2S/Ag nano-flake film. A very high ON/OFF ratio of 2.35 × 108 and satisfactory retention time of larger than 104 s are achieved. The redox reaction Ag+ (Ag2S) + e− → Ag at the Ag2S/Ag interface induced the filamentary conduction that is responsible for the observed memory effects.