Bi-Ge-Sb-Te Films for Reversible Phase-Change Optical Recording

Abstract

The Bi-Ge-Sb-Te phase-change recording films were prepared by DC magnetron sputtering of Bi5Ge9Sb68Te18 and Bi5Ge3Sb74Te18 targets, individually. The surface roughness of Bi5Ge9Sb68Te18 film was relatively low. At the recording speed of 27.92 m/s, the jitter value of Bi5Ge9Sb68Te18 disk was 21.33%, but Bi5Ge3Sb74Te18 disk could not be recorded. After the aging test, the reflectivity change (Rbef.−Raft.) of Bi5Ge9Sb68Te18 film was obviously less. It could be found that the Bi5Ge9Sb68Te18 film was suitable for high-speed recording and showed the better archival life stability. As the results, the recording performance and archival life stability of phase-change optical disks were dominated by the composition of recording film.