JOURNAL ARTICLE
1/f Noise in GaAs MESFETs
Abstract
The origin of low frequency noise in GaAs MESFETs was experimentally investigated. Traps in a depletion region of the MESFET were found to be primarily responsible for the low frequency noise. The observed dependence of the low frequency noise on the gate length supports this conclusion.
Keywords:
MESFET Noise (video) Infrasound Optoelectronics Flicker noise Gallium arsenide Materials science Noise generator Noise figure Physics Electrical engineering Acoustics Computer science Transistor Field-effect transistor Engineering Voltage
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23
Cited By
0.00
FWCI (Field Weighted Citation Impact)
0
Refs
0.12
Citation Normalized Percentile
Is in top 1%
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Topics
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Radio Frequency Integrated Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor Lasers and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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