Influences of SiO x layer thickness on the characteristics of In–Zn–O/SiO x / n -Si hetero-junction structure solar cells

Hau-Wei Fang; Tsung-Eong Hsieh; Jenh‐Yih Juang

doi:10.1016/j.surfcoat.2012.07.067

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Influences of SiO x layer thickness on the characteristics of In–Zn–O/SiO x / n -Si hetero-junction structure solar cells

Hau-Wei Fang Tsung-Eong Hsieh Jenh‐Yih Juang

Year: 2012 Journal: Surface and Coatings Technology Vol: 231 Pages: 214-218 Publisher: Elsevier BV

DOI: 10.1016/j.surfcoat.2012.07.067

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Keywords:

Materials science Layer (electronics) Pulsed laser deposition Solar cell Substrate (aquarium) Energy conversion efficiency Optoelectronics Current density Short circuit Indium Deposition (geology) Open-circuit voltage Silicon Thin film Voltage Nanotechnology

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Influences of SiO x layer thickness on the characteristics of In–Zn–O/SiO x / n -Si hetero-junction structure solar cells

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