Charge sensing in a Si/SiGe quantum dot with a radio frequency superconducting single-electron transistor

Abstract

We report the operation of a radio frequency superconducting single-electron transistor (rf-SSET) as a charge sensor for single and double Si/SiGe quantum dots (QDs). Real-time electron tunneling events are observed from the reflected signal of the rf-SSET with a charge sensitivity of 4×10−6 e/Hz, which demonstrates a fast charge detection time of a few tens of microseconds. Measurements of the reflected power are used to map out the stability diagram of the double quantum dot.