Modelling of the defect structure in GaN MOCVD thin films by X-ray diffraction

F. Huet; M.A. di Forte-Poisson; Albert Romann; M. Tordjman; J. Di Persio; B. Pécz

doi:10.1016/s0921-5107(98)00390-0

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Modelling of the defect structure in GaN MOCVD thin films by X-ray diffraction

F. Huet M.A. di Forte-Poisson Albert Romann M. Tordjman J. Di Persio B. Pécz

Year: 1999 Journal: Materials Science and Engineering B Vol: 59 (1-3)Pages: 198-201 Publisher: Elsevier BV

DOI: 10.1016/s0921-5107(98)00390-0

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Keywords:

Metalorganic vapour phase epitaxy Diffraction Materials science X-ray crystallography Optoelectronics X-ray Thin film Crystallography Optics Nanotechnology Chemistry Layer (electronics) Physics Epitaxy

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Modelling of the defect structure in GaN MOCVD thin films by X-ray diffraction

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