<title>Photoelectroluminescent electric field intensity sensor</title>

Abstract

The possibility of using electroluminescent semiconductors of the II-VI group to be used in the construction of the electric field intensity sensors is discussed. The idea of contact-free method of the electric field intensity measurement is based on the influence of electric field on optical properties of electroluminescent ZnS:Mn and ZnS⁺CdS:Mn semiconductors. The sensors presented do not belong to the group of intensity sensors. These luminescent fiber optic sensors are going to be applied in the future in high voltage electric equipment.