Dislocation and stacking fault interactions in silicon

D.R. Sparks

doi:10.1007/bf02654298

ScienceGate Book Chapters

JOURNAL ARTICLE

Dislocation and stacking fault interactions in silicon

D.R. Sparks

Year: 1987 Journal: Journal of Electronic Materials Vol: 16 (2)Pages: 119-122 Publisher: Springer Science+Business Media

DOI: 10.1007/bf02654298

Get Full-Text PDF Get Analytical Report

Keywords:

Stacking fault Stacking Materials science Dislocation Slip (aerodynamics) Nucleation Condensed matter physics Partial dislocations Epitaxy Silicon Crystallography Lattice (music) Composite material Chemistry Optoelectronics Physics Nuclear magnetic resonance

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.10

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Dislocation and stacking fault interactions in silicon

Metrics

Topics

Related Documents

Dislocation-Stacking Fault Tetrahedron Interactions in Cu

Measurement of stacking fault energy from dislocation interactions

Oxygen precipitation and stacking-fault formation in dislocation-free silicon

Atomistic Implications of Stacking Fault Energy on Dislocation - Void Interactions

Hardening in Au-Ag nanoboxes from stacking fault-dislocation interactions