Diode-pumped passivelyQ-switched high-repetition-rate Yb microchip laser

Abstract

The system of balance equations is modified for quasi-three-level passively Q-switched lasers with a slow saturable absorber. Optimal parameters of a Yb3+:YAG microchip laser with a passive Cr4+:YAG Q switch are calculated at a pulse repetition rate of ∼100 kHz. The single-mode operation of the Yb:YAG—Cr:YAG laser with a pulse repetition rate above 100 kHz, the average output power 0.45 W and peak power 1.5 kW is experimentally demonstrated. In the multimode lasing regime, pulses with a peak power of 4.2 kW are obtained at an average output power of 0.8 W and a pulse repetition rate of 10 kHz.