Spin-coated amorphous chalcogenide films

Abstract

Preliminary investigations have shown that a family of chalcogenides may be deposited in technologically useful thin film form by an inexpensive technique of spin deposition from solution. The materials which are amorphous and microstructure free retain many of the properties of the solute (e.g., As2S3, As2S2, As2Se3, As2Te3, or GeSe) from which they are prepared. Some of the materials have been demonstrated to be potentially useful for high resolution pattern replication in particular for microlithography.