Stimulated Emission from Donor Transitions in Silicon
С.Г. ПавловR. Kh. ZhukavinE. E. OrlovaV. N. ShastinA. V. KIRSANOVH.-W. HübersK. AuenH. Riemann
Abstract
The observation of far-infrared stimulated emission from shallow donor transitions in silicon is reported. Lasing with a wavelength of 59 &mgr;m due to the neutral donor intracenter 2p(0)-->1s(E) transition in Si:P pumped by CO2 laser radiation is obtained. Populations of D0 and D- center states and the balance of the radiation absorption and amplification are theoretically analyzed.
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