Synthesis and field-electron-emission behavior of aligned GaAs nanowires

Abstract

Large-area highly aligned GaAs nanowires were synthesized directly by etching GaAs wafer covered with Au film using H plasma. The characterizations by scanning electron microscopy and transmission electron microscopy reveal that the as-grown nanowires are uniform in distribution and the individual nanowires are well crystallized. The field-electron-emission behavior of the GaAs nanowire was studied and a low turn-on field of 2.0V∕μm was achieved, which suggests its potential application as cold electron sources. The mechanism for field-emission enhancement is also discussed.