CdSe/ZnS core–shell quantum dots charge trapping layer for flexible photonic memory

Su‐Ting Han; Ye Zhou; Li Zhou; Yan Yan; Long‐Biao Huang; Wei Wu; Vellaisamy A. L. Roy

doi:10.1039/c4tc01901f

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CdSe/ZnS core–shell quantum dots charge trapping layer for flexible photonic memory

Su‐Ting Han Ye Zhou Li Zhou Yan Yan Long‐Biao Huang Wei Wu Vellaisamy A. L. Roy

Year: 2015 Journal: Journal of Materials Chemistry C Vol: 3 (13)Pages: 3173-3180 Publisher: Royal Society of Chemistry

DOI: 10.1039/c4tc01901f

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Abstract

A novel design of UV-manipulated photonic nonvolatile memory based on spin-coated close-packed CdSe/ZnS quantum dots is reported.

Keywords:

Quantum dot Materials science Optoelectronics Trapping Photonics Non-volatile memory Layer (electronics) Charge (physics) Core (optical fiber) Quantum memory Shell (structure) Photonic crystal Nanotechnology Quantum Quantum computer Quantum network Physics Composite material

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Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Photonic Crystals and Applications

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

CdSe/ZnS core–shell quantum dots charge trapping layer for flexible photonic memory

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