JOURNAL ARTICLE
Minority carrier recombination in heavily-doped silicon
Mohit TyagiR. Van Overstraeten
Year: 1983 Journal: Solid-State Electronics Vol: 26 (6)Pages: 577-597 Publisher: Elsevier BV
Keywords:
Auger effect Silicon Dopant Doping Carrier lifetime Recombination Auger Materials science Acceptor Semiconductor Optoelectronics Atomic physics Condensed matter physics Chemistry Physics
Metrics
282
Cited By
4.83
FWCI (Field Weighted Citation Impact)
77
Refs
0.96
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Silicon and Solar Cell Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences → Engineering → Electrical and Electronic Engineering
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