Single-grain Si TFTs for high-speed flexible electronics

Abstract

Existent flat-panel display is mechanically stiff because it requires external connection of IC chips. At its present stage, displays with a-Si, metal oxide semiconductor or organic TFTs require still external connection of data driver and controllers, because of their low carrier mobilities. We will review our recent progress on direct formation of high speed Si circuits fabricated with a plastic compatible temperature. Large Si grains with a diameter of 4 microns were formed on predetermined positions by a pulsed laser crystallization process with a plastic compatible temperature. High performance transistors were fabricated inside a single Si grain.