JOURNAL ARTICLE

Electrical properties of Ge metal-oxide-semiconductor capacitors with La2O3 gate dielectric annealed in different ambient

H.X. XuJ.P. XuC.X. LiP. T. Lai

Year: 2010 Journal:   Thin Solid Films Vol: 518 (23)Pages: 6962-6965   Publisher: Elsevier BV
Keywords:
Annealing (glass) Dielectric Materials science Capacitor Gate dielectric Oxide Capacitance High-κ dielectric Analytical Chemistry (journal) Forming gas Metal Gate oxide Equivalent oxide thickness Leakage (economics) Semiconductor Metal gate Chemistry Optoelectronics Composite material Electrical engineering Metallurgy Voltage Electrode Transistor

Metrics

22
Cited By
2.32
FWCI (Field Weighted Citation Impact)
27
Refs
0.90
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Ferroelectric and Piezoelectric Materials
Physical Sciences →  Materials Science →  Materials Chemistry
Electronic and Structural Properties of Oxides
Physical Sciences →  Materials Science →  Materials Chemistry
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