Keywords:
Annealing (glass) Dielectric Materials science Capacitor Gate dielectric Oxide Capacitance High-κ dielectric Analytical Chemistry (journal) Forming gas Metal Gate oxide Equivalent oxide thickness Leakage (economics) Semiconductor Metal gate Chemistry Optoelectronics Composite material Electrical engineering Metallurgy Voltage Electrode Transistor
Metrics
22
Cited By
2.32
FWCI (Field Weighted Citation Impact)
27
Refs
0.90
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Ferroelectric and Piezoelectric Materials
Physical Sciences → Materials Science → Materials Chemistry
Electronic and Structural Properties of Oxides
Physical Sciences → Materials Science → Materials Chemistry
Related Documents
JOURNAL ARTICLE
Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations
F. JiJing-Ping XuP. T. LaiC. X. LiJianguo Guan
Journal: Applied Physics Letters Year: 2007 Vol: 91 (5)
JOURNAL ARTICLE
Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient
H.X. XuJ.P. XuC. X. LiP. T. Lai
Journal: Applied Physics Letters Year: 2010 Vol: 97 (2)
JOURNAL ARTICLE
Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric
G. MavrouS. GalataA. SotiropoulosPolychronis TsipasY. PanayiotatosA. DimoulasE. K. EvangelouJin Won SeoCh. Dieker
Journal: Microelectronic Engineering Year: 2007 Vol: 84 (9-10)Pages: 2324-2327
JOURNAL ARTICLE
Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric
Chih-Hsiang HsuMing-Tsong WangJoseph Ya‐min Lee
Journal: Journal of Applied Physics Year: 2006 Vol: 100 (7)