Mechanisms and kinetics of room-temperature silicon oxidation

G. F. Cerofolini; L. Meda

doi:10.1016/s0022-3093(97)00180-4

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Mechanisms and kinetics of room-temperature silicon oxidation

G. F. Cerofolini L. Meda

Year: 1997 Journal: Journal of Non-Crystalline Solids Vol: 216 Pages: 140-147 Publisher: Elsevier BV

DOI: 10.1016/s0022-3093(97)00180-4

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Keywords:

Silicon Kinetics Layer (electronics) Materials science Adsorption Chemical engineering Chemical physics Electron transfer Wet oxidation Chemistry Nanotechnology Photochemistry Physical chemistry Optoelectronics Catalysis Organic chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Mechanisms and kinetics of room-temperature silicon oxidation

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