A silicon NMOS monolithically integrated optical receiver

Abstract

We report a silicon p-i-n/NMOS monolithically integrated optical receiver. The p-i-n photodiode is a planar interdigitated structure that has exhibited a dark current of 1.3 pA at 5 V and quantum efficiencies of 84 and 74% at 800 and 870 nm, respectively. Both depletion- and enhancement-mode MOSFET's are used in the preamplifier; the effective channel length of the MOSFET's is 0.6 μm. A transimpedance of 6.5 k/spl Omega/ and a bandwidth of 130 MHz has been obtained from the preamplifier circuit. The sensitivities for a bit error rate of 10/sup -9/ were -33 and -25.5 dBm at bit rates of 155 and 300 Mb/s, respectively.