Optical properties of InGaAs/InP semiconductor nanostructures

Abstract

We have studied the optical properties of buried InGaAs/InP nanostructures fabricated by in situ focused gallium ion beam writing, dry etching, and overgrowth by gas source molecular beam epitaxy. Due to the small size and buried nature of these structures, cathodoluminescence imaging and spectroscopy are the most suitable techniques for studying them. We have determined the dose dependence of their optical properties and have fabricated fully buried quantum wires. We find high quantum efficiency of optical emission from structures as small as 2000 Å in lateral extent. With improvements in the in situ processing it should be possible to fabricate fully buried nanostructures as small as a few hundred angstroms in laterial dimensions.