JOURNAL ARTICLE

Electrical transport properties of boron-doped single-walled carbon nanotubes

Y. F. LiY. WangS. M. ChenHaifang WangTatsuo KanekoRikizo Hatakeyama

Year: 2013 Journal:   Journal of Applied Physics Vol: 113 (5)   Publisher: American Institute of Physics

Abstract

The transport properties of B-doped single-walled carbon nanotubes (SWNTs) are studied from both experimental and theoretical standpoints. Experimentally, it is found that the semiconducting behavior of SWNTs is drastically changed after B-doping, and the unusual abrupt current drops are observed at low temperatures, which may imply the possibility of superconducting transition in B-doped SWNTs. Using the density-functional tight-binding calculation, it is observed that B-doping induces the presence of density of state peaks near the Fermi level which shifts toward the valence band region, showing a clear charge-transfer characteristic, which agrees well with the experimental observations.

Keywords:
Doping Carbon nanotube Materials science Fermi level Condensed matter physics Boron Density of states Chemical physics Density functional theory Electrical resistivity and conductivity Superconductivity Valence (chemistry) Tight binding Nanotechnology Electronic structure Chemistry Electron Optoelectronics Computational chemistry Physics

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11
Cited By
0.44
FWCI (Field Weighted Citation Impact)
30
Refs
0.60
Citation Normalized Percentile
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Citation History

Topics

Carbon Nanotubes in Composites
Physical Sciences →  Materials Science →  Materials Chemistry
Graphene research and applications
Physical Sciences →  Materials Science →  Materials Chemistry
Nanopore and Nanochannel Transport Studies
Physical Sciences →  Engineering →  Biomedical Engineering
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