JOURNAL ARTICLE

Vertical nanowire light-emitting diode

R. KönenkampRobert C. WordChristoph Schlegel

Year: 2004 Journal:   Applied Physics Letters Vol: 85 (24)Pages: 6004-6006   Publisher: American Institute of Physics

Abstract

We report room-temperature, white-color electroluminescence in vertically oriented ZnO nanowires. Excitonic luminescence around 380 nm is observed as a shoulder on a broader defect-related band covering all of the visible range and centered at 620 nm. The ZnO nanowires are grown in a low-temperature process on SnO2-coated glass substrates, employing a technique that is suitable for large-area applications. The nanowires are robustly encapsulated in a thin polystyrene film deposited from high-molecular-weight solutions. Electron injection occurs through the transparent SnO2 layer, while hole injection is mediated by a p-doped polymer and an evaporated Au contact. Stable device operation is observed at ambient conditions on the time scale of 1 h.

Keywords:
Electroluminescence Nanowire Materials science Optoelectronics Light-emitting diode Luminescence Polystyrene Layer (electronics) Diode Doping Thin film Polymer Nanotechnology Composite material

Metrics

457
Cited By
12.69
FWCI (Field Weighted Citation Impact)
14
Refs
0.99
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry
GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials

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