The Co/Si( 111 ) interface formation: a temperature dependent reaction

P. Luches; A. Rota; S. Valeri; I. I. Pronin; D. A. Valdaitsev; N. S. Faradzhev; M. V. Gomoyunova

doi:10.1016/s0039-6028(02)01509-1

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The Co/Si( 111 ) interface formation: a temperature dependent reaction

P. Luches A. Rota S. Valeri I. I. Pronin D. A. Valdaitsev N. S. Faradzhev M. V. Gomoyunova

Year: 2002 Journal: Surface Science Vol: 511 (1-3)Pages: 303-311 Publisher: Elsevier BV

DOI: 10.1016/s0039-6028(02)01509-1

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Keywords:

Auger electron spectroscopy Stoichiometry Annealing (glass) Materials science Analytical Chemistry (journal) Deposition (geology) Electron diffraction Crystallography Diffraction Chemistry Physical chemistry Metallurgy Optics

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Electron and X-Ray Spectroscopy Techniques

Physical Sciences → Materials Science → Surfaces, Coatings and Films

Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

The Co/Si( 111 ) interface formation: a temperature dependent reaction

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