Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer

Zhen Deng; Zishen Li; Yang Jiang; Ziguang Ma; Yutao Fang; Yangfeng Li; Wenxin Wang; Haiqiang Jia; Hong Chen

doi:10.1007/s00339-015-9176-2

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Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer

Zhen Deng Zishen Li Yang Jiang Ziguang Ma Yutao Fang Yangfeng Li Wenxin Wang Haiqiang Jia Hong Chen

Year: 2015 Journal: Applied Physics A Vol: 119 (4)Pages: 1209-1213 Publisher: Springer Science+Business Media

DOI: 10.1007/s00339-015-9176-2

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Keywords:

Graphene Materials science Optoelectronics Quantum well Layer (electronics) Photoluminescence Exciton Quantum-confined Stark effect Light-emitting diode Piezoelectricity Wide-bandgap semiconductor Quantum efficiency Active layer Stark effect Nanotechnology Electric field Condensed matter physics Optics Physics Composite material

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer

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