Effect of Device Temperature on Domain Wall Motion in a Perpendicularly Magnetized Co/Ni Wire

Abstract

This paper describes experimental results obtained from measuring the dependence of device temperature on the current for domain wall motion in a Co/Ni wire having perpendicular magnetic anisotropy. Devices with different insulating layer thicknesses were prepared in order to control the device temperature. A stable domain wall motion was observed up to the temperature at which perpendicular magnetic anisotropy vanishes. Moreover, the current required for domain wall motion was independent of the device temperature.