Photoluminescence of neodymium-implanted gallium phosphide and gallium arsenide

Abstract

Characteristic intra 4f-shell luminescence spectra of Nd3+(4f3) have been observed from neodymium-implanted gallium phosphide and gallium arsenide. The luminescent centers were found to occupy different types of noncubic lattice sites, presumably formed by association of the neodymium implants with radiation damage centers. The relative intensities of the neodymium luminescent centers were found to depend critically on the conditions of postimplantation thermal annealing.