Preparation of Cu₂ZnSnSe₄ thin films by selenization of precursor evaporated from Cu₂ZnSnSe₄ compound

Abstract

Abstract Cu 2 ZnSnSe 4 ingot was synthesized and then used as a precursor for selenization process in order to fabricate Cu 2 ZnSnSe 4 thin films. The thin films were prepared at each point A‐F in our selenization process and their properties were investigated. Cu 2 ZnSnSe 4 ingot and thin films had a kesterite Cu 2 ZnSnSe 4 structure. From EPMA analysis and XRD studies, the mechanism of Cu 2 ZnSnSe 4 formation was discussed. Cu‐Se phases were related to Cu 2 ZnSnSe 4 formation. Cu 2 ZnSnSe 4 may decompose to Sn‐Se compound during the annealing process at 550 o C. Cu 2 ZnSnSe 4 thin film solar cells demonstrated V oc =300 mV, I sc =7.25 mA/cm 2 . The band gap energy of Cu 2 ZnSnSe 4 thin film determined from the QE spectra estimated to be approximately 1.04 eV. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)