Development of novel tungsten-doped high mobility transparent conductive In2O3 thin films

Abstract

A novel high mobility transparent conductive oxide thin film, tungsten-doped indium oxide (IWO), has been successfully grown on conventional glass substrates by reactive direct current magnetron sputtering technique from a metallic target. Analyses of x-ray photoelectron spectroscopy and x-ray diffraction reveal that tetravalent and hexavalent tungsten ions substitute for trivalent host indium ions without changing the crystalline structure of In2O3. IWO thin films were grown with resistivity of 4.4×10−4Ωcm, carrier mobility of 52.8cm2V−1S−1; transmittance exceeding 80% at wavelengths between 380 and 900nm, and average roughness of 7.5nm.