Flexible and transparent ReRAM with GZO memory layer and GZO-electrodes on large PEN sheet

Kentaro Kinoshita; Takumi Okutani; Hayato Tanaka; Toshio Hinoki; Hideaki Agura; Kenji Yazawa; Koutoku Ohmi; Satoru Kishida

doi:10.1016/j.sse.2010.11.026

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Flexible and transparent ReRAM with GZO memory layer and GZO-electrodes on large PEN sheet

Kentaro Kinoshita Takumi Okutani Hayato Tanaka Toshio Hinoki Hideaki Agura Kenji Yazawa Koutoku Ohmi Satoru Kishida

Year: 2011 Journal: Solid-State Electronics Vol: 58 (1)Pages: 48-53 Publisher: Elsevier BV

DOI: 10.1016/j.sse.2010.11.026

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Keywords:

Resistive random-access memory Materials science Optoelectronics Electrode Sheet resistance Layer (electronics) Fabrication Transmittance Doping Nanotechnology

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Flexible and transparent ReRAM with GZO memory layer and GZO-electrodes on large PEN sheet

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