InGaN/GaN nanopillar‐array light emitting diodes

Abstract

Abstract GaN light emitting diodes were fabricated from arrays of nanopillars with embedded InGaN quantum wells. InGaN heterostructures were grown by MOCVD on n‐type GaN templates and pillars were fabricated by laser interference lithography and subsequent reactive ion etching and annealing. The tops of the pillars were coalesced by lateral growth of p‐type GaN by MBE forming a planar contact layer. This structure enables integration with standard planar processing while taking advantage of the nanopillar structure. LEDs were fabricated and characterized by electroluminescence, current‐voltage, and output power vs. current measurements. The devices showed rectifying behavior with a turn‐on voltage of 3 V and electroluminescence peak at 400 nm. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)