Low-Temperature Characteristics of Ambipolar SiO₂/Si/SiO₂ Hall-Bar Devices

Abstract

We present the basic low-temperature characteristics of SiO2/Si/SiO2 Hall-bar devices, where each Hall-bar arm is split into p- and n-type Ohmic contacts made by selective area ion-implantation doping of boron and phosphorus, respectively. Magnetotransport measurements of a 22-nm-thick Si(001) quantum well show Shubnikov–de Haas oscillations of two-dimensional holes in addition to the electrons generated at both sides of the quantum well. We discuss applications for extracting the physical characteristics of this technologically vital material system.