JOURNAL ARTICLE

Schottky barrier control gate-type carbon nanotube field-effect transistor biosensors

Masuhiro AbeYasuhide OhnoKazuhiko Matsumoto

Year: 2012 Journal:   Journal of Applied Physics Vol: 111 (3)   Publisher: American Institute of Physics

Abstract

We propose a unique structure for carbon nanotube field-effect transistors (CNT-FETs/with a Schottky barrier control gate (SBC gate) to improve the sensitivity of CNT-FET biosensors. The performance of the new biosensors was compared with conventional devices with back gate-type CNT-FETs both through experiments and calculations. The SBC gate-type CNT-FETs could detect proteins with three times greater sensitivity than the back gate-type CNT-FETs in the experimental measurements. The sensitivity of SBC gate-type CNT-FET biosensors was calculated to be five times greater than that of back gate-type CNT-FETs in simulations using the finite element method.

Keywords:
Biosensor Schottky barrier Materials science Field-effect transistor Carbon nanotube Carbon nanotube field-effect transistor Optoelectronics Transistor Nanotechnology Sensitivity (control systems) Electronic engineering Electrical engineering Voltage Engineering

Metrics

4
Cited By
0.44
FWCI (Field Weighted Citation Impact)
36
Refs
0.58
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Carbon Nanotubes in Composites
Physical Sciences →  Materials Science →  Materials Chemistry
Mechanical and Optical Resonators
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Nanowire Synthesis and Applications
Physical Sciences →  Engineering →  Biomedical Engineering

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