JOURNAL ARTICLE

Optical properties of wurtzite and zinc-blende GaN/AlN quantum dots

Vladimir A. FonoberovAlexander A. Balandin

Year: 2004 Journal:   Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Vol: 22 (4)Pages: 2190-2194   Publisher: American Institute of Physics

Abstract

We investigate theoretically and compare optical properties of wurtzite and zinc-blende GaN/AlN quantum dots with heights from 1.5 to 4.5 nm. The quantum dot size corresponds to the strong quantum confinement regime. It has been established that the built-in piezoelectric field at the GaN/AlN interface governs optical properties of wurtzite quantum dots while having a small effect on zinc-blende quantum dots. The strain field strongly modifies the excitonic states in both wurtzite and zinc-blende GaN/AlN quantum dots. It has been shown that the radiative lifetime dependence on the quantum dot height is very different in the zinc-blende and wurtzite quantum dots. The excitonic optical properties of GaN/AlN quantum dots calculated using our model are in good agreement with available experimental data. Reported theoretical results for the optical spectra of GaN/AlN quantum dots can be used for interpretation of experimental data and optimization of the quantum dot structures for optoelectronic applications.

Keywords:
Wurtzite crystal structure Quantum dot Materials science Condensed matter physics Zinc Optoelectronics Physics

Metrics

44
Cited By
3.16
FWCI (Field Weighted Citation Impact)
8
Refs
0.93
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry

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