Inverted cylindrical magnetron sputtering for HTSC thin film growth

Abstract

ABSTRACT The Inverted Cylindrical Magnetron Sputtering (1CM) is a reliable and reproducible method for the production of HTSC thin films. This allows systematic studies of film growth as a function of various depositionparameters including film thickness, substrate material or buffer layers. We report the growth conditions andgrowth quality of ,,l-2-3 films of different orientation with special emphasis on a-axis films which may be of interest for applications if 3-dimensional patterning is attempted. Substrate orientation and substrate temperature are the essential parameters controlling the growth orientation. High quality buffer layers (FWHM mosaic spread <0.2°, x,<5% in channeling experiment) of Zr(Y)O2 could be deposited on R-plane sapphire.Critical current densities near 3 X 106 AJcm2 at 77 K could be achieved for the 1-2-3 films deposited on thesebuffer layers. Finally we report results of in situ BiSrCaCuO thin film deposition revealing first signs ofchanneling behaviour (x