Point Contact Diodes Utilizing Single-Crystal Reduced Rutile Titanium Dioxide

Abstract

Point contact diodes were made by utilizing reduced single-crystal rutile TiO2. No indication of minority carrier holes injection was experimentally detectable. The diode volt-ampere characteristics were fitted to different theoretical mathematical models of diode operation for noninjecting contacts. The resultant fits indicate (for both diode and diffusion theory) that the rectification phenomena is most likely attributable to a Mott-type barrier in which the image forces reduce the effective barrier height in the reverse direction.